Power cycling failure analysis of double side cooled IGBT modules for automotive applications
Sign Up to like & getrecommendations! Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114282
Abstract: Abstract A three-phase half-bridge insulated gate bipolar transistor (IGBT) module is designed and prototyped as the assembly of heat sink-substrate-post-chip-substrate-heat sink to realize high power density and good thermal performance for electric and hybrid electric… read more here.
Keywords: microscopy; power cycling; double side; power ... See more keywords