Effects of source/drain elevation and side spacer dielectric on drivability performance of non-abrupt ultra shallow junction gate underlap GAA MOSFETs
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DOI: 10.1007/s12648-017-1091-2
Abstract: Present work focuses on quantitative effects of source/drain elevation height ($${\text{h}}_{\text{SD}}$$hSD) and side spacer dielectric material (Air, SiO2, Si3N4 and HfO2) on the current drive of non-abrupt ultra shallow junction (USJ) gate all around (GAA)… read more here.
Keywords: text text; drain elevation; side spacer; source drain ... See more keywords