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Published in 2018 at "Acta Materialia"
DOI: 10.1016/j.actamat.2017.11.031
Abstract: Abstract Heteroepitaxy of silicon germanium (SiGe) prepared on a sapphire substrate (Al 2 O 3 ) requires scrupulous attention to growth conditions. Previous work was used a substrate temperature of 890 ° C to grow…
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Keywords:
mechanism;
sapphire;
sige;
growth ... See more keywords
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Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.160007
Abstract: Abstract The crystal structure of a material dictates many of its properties. This study focuses on a SiGe compound with a hexagonal crystal system that demonstrates superior thermoelectric properties than those of its conventional cubic…
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Keywords:
type thermoelectric;
polymorph;
hexagonal sige;
sige ... See more keywords
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Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113499
Abstract: Abstract Space-related electronics contain different types of oxide isolations which are the crucial factor resulting in device degradation and failure. Previous studies show that the local oxidation of silicon (LOCOS) isolation Silicon‑germanium heterojunction bipolar transistor…
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Keywords:
comparison holes;
low dose;
sige;
rate ... See more keywords
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Published in 2019 at "Materialia"
DOI: 10.1016/j.mtla.2019.100374
Abstract: ..Abstract In this work, we fabricated nanocomposite thin films of MnSiγ and SiGe, both of which are promising thermoelectric materials, and studied the dependence of their crystal structures and thermoelectric properties on the Ge content.…
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Keywords:
mnsi sige;
thin films;
addition;
sige ... See more keywords
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Published in 2018 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.10.002
Abstract: Abstract We have researched on the formation of crystalline silicon-germanium (c-SiGe) films as a new material for bottom cells of silicon-based multi-junction solar cells. We conducted solid phase crystallization (SPC) from amorphous SiGe (a-SiGe) precursors…
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Keywords:
formation crystalline;
crystallization;
crystalline silicon;
sige ... See more keywords
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Published in 2018 at "ACS Omega"
DOI: 10.1021/acsomega.7b01957
Abstract: Strain-engineered two-dimensional (2D) SiGe is predicted to be a topological insulator (TI) based on first-principle calculations. The dynamical and thermal stabilities were ascertained through phonon spectra and ab initio molecular dynamics simulations. 2D SiGe remains…
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Keywords:
sige;
two dimensional;
dimensional sige;
tensile ... See more keywords
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Published in 2021 at "Nanoscale"
DOI: 10.1039/d0nr08051a
Abstract: Formation of Ge-rich prismatic inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires is reported and discussed in relation to a growth model that explains their origin. An accurate TEM/EDX analysis shows that such prisms…
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Keywords:
gap;
sige shell;
inclusions hexagonal;
hexagonal sige ... See more keywords
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Published in 2019 at "APL Materials"
DOI: 10.1063/1.5088441
Abstract: Compressively strained SiGe-On-Insulator (SGOI) made by the Ge-condensation technique is used as a performance booster for ultrathin fully depleted silicon-on-insulator transistor technology. Here, we report on the evolution of the compressive strain in the SiGe…
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Keywords:
condensation technique;
sige;
layer;
insulator ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0006958
Abstract: Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and defect-induced acceptors. Here, we demonstrate the low-temperature (120–350 °C) synthesis of nanocrystalline…
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Keywords:
sige layers;
layer exchange;
sige;
type sige ... See more keywords
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Published in 2022 at "Infectious Diseases"
DOI: 10.1080/23744235.2022.2057583
Abstract: Abstract Purpose Ticks transmit several pathogens and seem implicated in the production of specific IgE antibodies to alpha-1,3-galactose (α-gal sIgE). They cause delayed and immediate allergy to mammalian meat and medication including antivenoms, vaccines and…
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Keywords:
poland;
alpha galactose;
gal sige;
sige ... See more keywords
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Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aae62d
Abstract: Alignment control of three dimensional (3D) SiGe nanodot arrangements is investigated using a reduced pressure chemical vapor deposition system. Several cycles of SiGe layers with 30% Ge content and Si spacers are deposited by SiH4-GeH4…
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Keywords:
sige nanodots;
surface;
alignment control;
sige nanodot ... See more keywords