Articles with "sige" as a keyword



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Lattice-alignment mechanism of SiGe on Sapphire

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Published in 2018 at "Acta Materialia"

DOI: 10.1016/j.actamat.2017.11.031

Abstract: Abstract Heteroepitaxy of silicon germanium (SiGe) prepared on a sapphire substrate (Al 2 O 3 ) requires scrupulous attention to growth conditions. Previous work was used a substrate temperature of 890 ° C to grow… read more here.

Keywords: mechanism; sapphire; sige; growth ... See more keywords
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n-type Thermoelectric Properties of a Hexagonal SiGe Polymorph Superior to a Cubic SiGe

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Published in 2021 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2021.160007

Abstract: Abstract The crystal structure of a material dictates many of its properties. This study focuses on a SiGe compound with a hexagonal crystal system that demonstrates superior thermoelectric properties than those of its conventional cubic… read more here.

Keywords: type thermoelectric; polymorph; hexagonal sige; sige ... See more keywords
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Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes

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Published in 2019 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2019.113499

Abstract: Abstract Space-related electronics contain different types of oxide isolations which are the crucial factor resulting in device degradation and failure. Previous studies show that the local oxidation of silicon (LOCOS) isolation Silicon‑germanium heterojunction bipolar transistor… read more here.

Keywords: comparison holes; low dose; sige; rate ... See more keywords
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Effects of Ge addition on thermoelectric properties in a nanocomposite of MnSi and SiGe thin films

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Published in 2019 at "Materialia"

DOI: 10.1016/j.mtla.2019.100374

Abstract: ..Abstract In this work, we fabricated nanocomposite thin films of MnSiγ and SiGe, both of which are promising thermoelectric materials, and studied the dependence of their crystal structures and thermoelectric properties on the Ge content.… read more here.

Keywords: mnsi sige; thin films; addition; sige ... See more keywords
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Formation of crystalline silicon-germanium thin films on silicon substrates by solid phase crystallization

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Published in 2018 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2017.10.002

Abstract: Abstract We have researched on the formation of crystalline silicon-germanium (c-SiGe) films as a new material for bottom cells of silicon-based multi-junction solar cells. We conducted solid phase crystallization (SPC) from amorphous SiGe (a-SiGe) precursors… read more here.

Keywords: formation crystalline; crystallization; crystalline silicon; sige ... See more keywords
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Topological Insulator in Two-Dimensional SiGe Induced by Biaxial Tensile Strain

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Published in 2018 at "ACS Omega"

DOI: 10.1021/acsomega.7b01957

Abstract: Strain-engineered two-dimensional (2D) SiGe is predicted to be a topological insulator (TI) based on first-principle calculations. The dynamical and thermal stabilities were ascertained through phonon spectra and ab initio molecular dynamics simulations. 2D SiGe remains… read more here.

Keywords: sige; two dimensional; dimensional sige; tensile ... See more keywords
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Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting.

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Published in 2021 at "Nanoscale"

DOI: 10.1039/d0nr08051a

Abstract: Formation of Ge-rich prismatic inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires is reported and discussed in relation to a growth model that explains their origin. An accurate TEM/EDX analysis shows that such prisms… read more here.

Keywords: gap; sige shell; inclusions hexagonal; hexagonal sige ... See more keywords
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Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique

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Published in 2019 at "APL Materials"

DOI: 10.1063/1.5088441

Abstract: Compressively strained SiGe-On-Insulator (SGOI) made by the Ge-condensation technique is used as a performance booster for ultrathin fully depleted silicon-on-insulator transistor technology. Here, we report on the evolution of the compressive strain in the SiGe… read more here.

Keywords: condensation technique; sige; layer; insulator ... See more keywords
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Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics

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Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0006958

Abstract: Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and defect-induced acceptors. Here, we demonstrate the low-temperature (120–350 °C) synthesis of nanocrystalline… read more here.

Keywords: sige layers; layer exchange; sige; type sige ... See more keywords
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Sensitisation and allergic reactions to alpha-1,3-galactose in Podlasie, Poland, an area endemic for tick-borne infections

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Published in 2022 at "Infectious Diseases"

DOI: 10.1080/23744235.2022.2057583

Abstract: Abstract Purpose Ticks transmit several pathogens and seem implicated in the production of specific IgE antibodies to alpha-1,3-galactose (α-gal sIgE). They cause delayed and immediate allergy to mammalian meat and medication including antivenoms, vaccines and… read more here.

Keywords: poland; alpha galactose; gal sige; sige ... See more keywords
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Alignment control of self-ordered three dimensional SiGe nanodots

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Published in 2018 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/aae62d

Abstract: Alignment control of three dimensional (3D) SiGe nanodot arrangements is investigated using a reduced pressure chemical vapor deposition system. Several cycles of SiGe layers with 30% Ge content and Si spacers are deposited by SiH4-GeH4… read more here.

Keywords: sige nanodots; surface; alignment control; sige nanodot ... See more keywords