A 12-bit 1.0/2.0 GS/s Pipeline ADC in 0.18 µm SiGe BiCMOS
Sign Up to like & getrecommendations! Published in 2018 at "International Journal of Electronics"
DOI: 10.1080/00207217.2018.1494335
Abstract: ABSTRACT A 12-bit time-interleaved 1.0/2.0 GS/s pipeline analogue–digital converter (ADC) is presented and implemented in 0.18 µm SiGe BiCMOS. Such an ADC consists of two identical channels, each of which can operate at 1 GS/s.… read more here.
Keywords: adc; sige bicmos; one channel; pipeline ... See more keywords
A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2016.2646910
Abstract: This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing… read more here.
Keywords: sige bicmos; gain; power; power amplifier ... See more keywords
Active Positive Sloped Equalizer for X-Band SiGe BiCMOS Phased Array Applications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2019.2896526
Abstract: This brief presents an active equalizer circuit with positive gain slope at X-Band (8–12 GHz). Compared to passive examples, the active equalizer realized better filter and impedance characteristics in frequency of interest with increased functionality… read more here.
Keywords: sige bicmos; gain; equalizer; band ... See more keywords
Integrated 240-GHz Dielectric Sensor With dc Readout Circuit in a 130-nm SiGe BiCMOS Technology
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2018.2839104
Abstract: This paper presents a high-integration miniaturized dielectric spectroscopy system for sensing the change of permittivity at 240 GHz in the SiGe BiCMOS technology. The sensor features a transducer with a resonator to perform bandpass frequency… read more here.
Keywords: sige bicmos; system; change; spectroscopy ... See more keywords
Optically clocked switched-emitter-follower THA in a photonic SiGe BiCMOS technology.
Sign Up to like & getrecommendations! Published in 2021 at "Optics express"
DOI: 10.1364/oe.425710
Abstract: In this paper a novel opto-electronic Track-and-Hold Amplifier (OE-THA) is presented. The OE-THA can be used as a sampler in a photonic analog-to-digital-converter (ADC). It is fabricated in a silicon photonic 250 nm SiGe BiCMOS technology… read more here.
Keywords: sige bicmos; tha; optically clocked; bicmos technology ... See more keywords
On-Chip Integrated Distributed Amplifier and Antenna Systems in SiGe BiCMOS for Transceivers with Ultra-Large Bandwidth
Sign Up to like & getrecommendations! Published in 2017 at "Frequenz"
DOI: 10.1515/freq-2017-0155
Abstract: Abstract This paper presents an overview of the research work currently being performed within the frame of project DAAB and its successor DAAB-TX towards the integration of ultra-wideband transceivers operating at mm-wave frequencies and capable… read more here.
Keywords: sige bicmos; chip integrated; integrated distributed; distributed amplifier ... See more keywords
A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14061184
Abstract: This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth… read more here.
Keywords: 130 sige; compact vector; sige bicmos; bicmos technology ... See more keywords