Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique
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DOI: 10.1016/j.sse.2019.107701
Abstract: Abstract In this study, tunnel field-effect transistor (TFET) which has surface Ge-rich SiGe nanowire as a channel has been demonstrated. There are improvements in terms of on-current and subthreshold swing (SS) comparing with control groups… read more here.
Keywords: sige channel; surface; condensation; channel ... See more keywords
Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion
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DOI: 10.1088/1361-6641/ac3dd5
Abstract: In this research, based on I–V and C–V measurement at different temperatures, the interface defect density in the device with the Si/SiGe channel was discussed. In addition, negative bias temperature instability (NBTI) is also studied.… read more here.
Keywords: bias temperature; negative bias; sige channel; stress ... See more keywords
Preparation and electrical performance optimization of SiGe channel FinFET and GAA transistors on SOI substrate
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DOI: 10.1088/1361-6641/ade17e
Abstract: In this work, SiGe channel FinFET on SOI substrate is successfully prepared through a newly developed SiGe/Si-cap epitaxy and etching processes. This SiGe SOI FinFET demonstrates a high Ion of 3.6 × 10−4 A μm−1,… read more here.
Keywords: gaa; sige channel; channel finfet; soi substrate ... See more keywords