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Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125541
Abstract: Abstract SiGe films were grown on a chemical vapor deposition (CVD)-grown Si0.88Ge0.12/Si (0 0 1) graded film with different growth solution compositions using a temperature interval of 950-940 °C by liquid phase epitaxy (LPE). The LPE films grown…
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Keywords:
cvd grown;
sige graded;
graded film;
grown sige ... See more keywords