Use of high order precursors for manufacturing gate all around devices
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DOI: 10.1016/j.mssp.2016.10.044
Abstract: Abstract Epitaxial growth of strained and defect free SiGe layers grown with disilane and digermane was investigated. This precursors set allows to cover a broad range of Ge concentration (15–65%) at low temperatures (400–550 °C). It… read more here.
Keywords: growth; gate around; growth rate; sige growth ... See more keywords