Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113561
Abstract: Abstract Layout and profile adjustments are presented based on TCAD simulation to improve the inverse-mode performances of silicon-germanium heterojunction bipolar transistor (SiGe HBT). Then the single event transient (SET) and total ionizing dose (TID) sensitivity… read more here.
Keywords: mode; set tid; sige hbt; layout profile ... See more keywords
Experimental study of pulse neutron irradiation damage in SiGe HBT
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Nuclear Science and Technology"
DOI: 10.1080/00223131.2018.1512427
Abstract: ABSTRACT The response to transient irradiation of npn SiGe HBT (BG35 SiGe BiCMOS), i.e. device under test (DUT) was studied with online measurement of 1 MeV equivalent pulse neutron fluence of 0.8 × 1013n/cm2. The… read more here.
Keywords: 1013n cm2; neutron; irradiation; pulse neutron ... See more keywords
A SiGe HBT BiCMOS 1-to-4 ADC Frontend Enabling Low Bandwidth Digitization of 100 GBaud PAM4 Data
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2019.2951592
Abstract: Market forecasts for intra and inter data center interconnects predict high growth rates in the upcoming years. This is associated with increasing requirements in terms of costs, power consumption, and bit rate per wavelength. Today,… read more here.
Keywords: adc frontend; hbt bicmos; sige hbt; gbaud pam4 ... See more keywords
A 30.1 mW / $\mu$ m2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2954600
Abstract: This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe ${f} _{\text {T}}$ HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on… read more here.
Keywords: tex math; inline formula; sige hbt;
A Linear High Frequency gm Boosting Wideband LNA in 130 nm SiGe HBT with Minimum NF of 4.3 dB for WiGig Application
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Circuits, Systems and Computers"
DOI: 10.1142/s0218126622500013
Abstract: This paper presents an inductor less wideband low noise amplifier (LNA) with an area of 0.3[Formula: see text]mm2, using 130[Formula: see text]nm SiGe BiCMOS technology targeted for 5G WiGig wireless application. A [Formula: see text]… read more here.
Keywords: see text; formula see; sige hbt; high frequency ... See more keywords