Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.07.024
Abstract: Abstract This paper deals with the Early effect of SiGe HBTs. Simple, analytical expressions are derived for forward and reverse Early voltages, considering different Ge profiles in the base, including box, triangular, and trapezoidal profiles.… read more here.
Keywords: early effect; box triangular; triangular trapezoidal; sige hbts ... See more keywords
A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2018.2875064
Abstract: Total ionizing dose effects induced by 1 MeV electron and 5 MeV proton on the dc electrical characteristics of 200 GHz silicon germanium heterojunction bipolar transistors (SiGe HBTs) were investigated. These results were compared with… read more here.
Keywords: tex math; sige hbts; proton; inline formula ... See more keywords
Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2950864
Abstract: A comparison of heavy-ion-induced single-event transients (SETs) in silicon–germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a reduction of sensitive volume of $\approx… read more here.
Keywords: comparison; single event; soi; sige hbts ... See more keywords