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   Articles with "sige hbts" as a keyword



Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs

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recommendations! Published in 2017 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2017.07.024

Abstract: Abstract This paper deals with the Early effect of SiGe HBTs. Simple, analytical expressions are derived for forward and reverse Early voltages, considering different Ge profiles in the base, including box, triangular, and trapezoidal profiles.… read more here.

Keywords: early effect; box triangular; triangular trapezoidal; sige hbts ... See more keywords

Broadband Noise Characterization of SiGe HBTs Down to 4K

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recommendations! Published in 2025 at "IEEE Journal of the Electron Devices Society"

DOI: 10.1109/jeds.2025.3595576

Abstract: This paper provides a comprehensive analysis of the DC and RF behavior of HBTs, spanning temperatures from 350 to 3.8 K. It underscores the necessity of detailed studies for the design of RF circuits for… read more here.

Keywords: ghz; sige hbts; broadband noise; characterization ... See more keywords

A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs

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recommendations! Published in 2018 at "IEEE Transactions on Device and Materials Reliability"

DOI: 10.1109/tdmr.2018.2875064

Abstract: Total ionizing dose effects induced by 1 MeV electron and 5 MeV proton on the dc electrical characteristics of 200 GHz silicon germanium heterojunction bipolar transistors (SiGe HBTs) were investigated. These results were compared with… read more here.

Keywords: tex math; sige hbts; proton; inline formula ... See more keywords

Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM

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recommendations! Published in 2024 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2023.3321017

Abstract: This study delves deeper into the high-frequency (HF) behavior of state-of-the-art sub-THz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55 nm BiCMOS process technology from STMicroelectronics. Using measurement data, calibrated TCAD simulations, and compact… read more here.

Keywords: compact modeling; hicum; sige hbts; exploring compact ... See more keywords

Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

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recommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2019.2950864

Abstract: A comparison of heavy-ion-induced single-event transients (SETs) in silicon–germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a reduction of sensitive volume of $\approx… read more here.

Keywords: comparison; single event; soi; sige hbts ... See more keywords