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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5018636
Abstract: We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4âKâ300âK. At low temperatures…
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Keywords:
sige heterostructure;
undoped sige;
dimensional electron;
electron gas ... See more keywords