Engineering Ge Profiles in Si/SiGe Heterostructures for Increased Valley Splitting
Sign Up to like & getrecommendations! Published in 2025 at "Nano Letters"
DOI: 10.1021/acs.nanolett.5c02848
Abstract: Electron-spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction-band valleys. While sharp quantum-well interfaces are pursued to increase the valley-splitting energy deterministically, here we explore an… read more here.
Keywords: valley splitting; engineering profiles; valley; sige heterostructures ... See more keywords
Optimizing photocurrent intensity in layered SiGe heterostructures
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad70d4
Abstract: We study the dependence of photo-spectral intensity on tri- and multilayers of SiO2/[SiGe [ dSiGe]/SiO2]N with repetitions N = 1 to 10 and thicknesses dSiGe=5–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the… read more here.
Keywords: intensity; optimizing photocurrent; intensity layered; layered sige ... See more keywords
Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.1.073602
Abstract: We present a joint theoretical and experimental analysis of the dislocation distribution in graded epitaxial SiGe crystals grown on under-etched Si pillars by low-energy plasma-enhanced chemical vapor deposition. Dislocation dynamics simulations are used to investigate… read more here.
Keywords: three dimensional; sige heterostructures; dislocation; sige ... See more keywords