Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching
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DOI: 10.1103/physrevmaterials.1.073602
Abstract: We present a joint theoretical and experimental analysis of the dislocation distribution in graded epitaxial SiGe crystals grown on under-etched Si pillars by low-energy plasma-enhanced chemical vapor deposition. Dislocation dynamics simulations are used to investigate… read more here.
Keywords: three dimensional; sige heterostructures; dislocation; sige ... See more keywords