Submicron- and micron-sized SiGe island formation on Si(100) by dewetting
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DOI: 10.1016/j.tsf.2017.09.045
Abstract: Abstract The SiGe dewetting from Si(100) is found to take place during Ge deposition at 750–950 °C. The dewetting provides the formation of compact islands with lateral sizes from about 0.1 to 3 μm, large contact angles… read more here.
Keywords: sige island; energy; submicron micron; formation ... See more keywords