Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2016.08.091
Abstract: Abstract We report on the investigation of thin, epitaxially grown Si 1- x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions… read more here.
Keywords: layers 001; sige layers; spectroscopic ellipsometry; thin sige ... See more keywords
Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics
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DOI: 10.1063/5.0006958
Abstract: Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and defect-induced acceptors. Here, we demonstrate the low-temperature (120–350 °C) synthesis of nanocrystalline… read more here.
Keywords: sige layers; layer exchange; sige; type sige ... See more keywords