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Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aae62d
Abstract: Alignment control of three dimensional (3D) SiGe nanodot arrangements is investigated using a reduced pressure chemical vapor deposition system. Several cycles of SiGe layers with 30% Ge content and Si spacers are deposited by SiH4-GeH4…
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Keywords:
sige nanodots;
surface;
alignment control;
sige nanodot ... See more keywords