Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
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DOI: 10.1103/physrevb.103.l161302
Abstract: We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system.… read more here.
Keywords: electron system; dimensional electron; electron; sige two ... See more keywords
Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
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DOI: 10.1103/physrevb.99.081106
Abstract: The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments… read more here.
Keywords: mobility; mobility sige; electron; phase transition ... See more keywords