Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
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DOI: 10.3390/mi9120657
Abstract: Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection… read more here.
Keywords: drain regions; esd protection; source drain; tfet ... See more keywords