Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
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DOI: 10.1103/physrevb.103.l161302
Abstract: We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system.… read more here.
Keywords: electron system; dimensional electron; electron; sige two ... See more keywords