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Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617120028
Abstract: Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via…
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Keywords:
etching sige;
sige usage;
selective etching;
silicon ... See more keywords