Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature
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DOI: 10.1063/5.0042482
Abstract: A direct bandgap can be engineered in Ge-rich group-IV alloys by increasing Sn content and by introducing tensile strain in GeSn. Here, we combine these two routes in quantum well (QW) structures and systematically analyze… read more here.
Keywords: quantum; tensile strained; gesn quantum; sigesn gesn ... See more keywords