Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs
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DOI: 10.1109/ted.2018.2881255
Abstract: In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully… read more here.
Keywords: signal compact; large signal; model; models large ... See more keywords