Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors
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DOI: 10.1063/1.4991665
Abstract: In order to assess the underlying physical mechanisms of hot carrier-related degradation such as defect generation in millimeter-wave GaN power amplifiers, we have simulated the electron energy distribution function under large-signal radio frequency conditions in… read more here.
Keywords: frequency; generation; signal radio; operation ... See more keywords