Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2016.12.056
Abstract: Abstract Metallic α-FeSi 2 nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up… read more here.
Keywords: grown 110; stability iron; iron silicide; epitaxially grown ... See more keywords
Refined structure model of rare earth silicide nanowires on Si(001)
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DOI: 10.1063/1.5086369
Abstract: The internal atomic structure of terbium silicide nanowires on Si(001) is determined by scanning tunneling microscopy and high-resolution transmission electron microscopy. It is found that room temperature capping by amorphous silicon does not affect the… read more here.
Keywords: nanowires 001; microscopy; rare earth; structure ... See more keywords