Articles with "silicon controlled" as a keyword



Bidirectional silicon‐controlled rectifier for advanced ESD protection applications

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Published in 2019 at "Electronics Letters"

DOI: 10.1049/el.2018.6686

Abstract: In this Letter, an enhanced bidirectional modified lateral silicon-controlled rectifier (EBMLSCR) is proposed for advanced dual-directional electrostatic discharge (ESD) protection applications. The ESD characteristics of the novel EBMLSCR and conventional bidirectional modified lateral silicon-controlled rectifier… read more here.

Keywords: silicon controlled; controlled rectifier; protection applications; esd protection ... See more keywords

Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

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Published in 2020 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2020.3022888

Abstract: In this letter, a new silicon-controlled rectifier (SCR) structure fabricated using 4H-SiC materials has been proposed and investigated. The proposed structure alleviates the strong-snapback phenomenon that occurs in the 4H-SiC SCR and demonstrates low trigger… read more here.

Keywords: holding voltage; voltage; controlled rectifier; topology ... See more keywords

Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection

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Published in 2024 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2024.3370172

Abstract: In this letter, a modified low-voltage triggered silicon-controlled rectifier (LVTSCR) is proposed and fabricated for electrostatic discharge (ESD) protection in a 0.18- $\mu \text{m}$ 1.8-V CMOS technology. The device leverages the parasitic p-n junction capacitance… read more here.

Keywords: voltage triggered; modified low; low voltage; voltage ... See more keywords

A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications

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Published in 2019 at "IEEE Transactions on Device and Materials Reliability"

DOI: 10.1109/tdmr.2019.2895208

Abstract: In this paper, a compact and self-isolated dual directional silicon-controlled rectifier (CSDDSCR) developed in a single N-well has been proposed and demonstrated. Without using the P-well, the N-type isolation structure as well as an auxiliary… read more here.

Keywords: compact self; dual directional; isolated dual; directional silicon ... See more keywords

All-Directional Silicon-Controlled Rectifier With Improved Voltage Clamping Capability for FinFET ESD Protection

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Published in 2024 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2024.3359175

Abstract: The narrow design window in FinFET process has put forward very strict demands on the clamping voltage of input–output (I/O) protection devices in rail-based electrostatic discharge (ESD) protection networks. In this article, a novel all-directional… read more here.

Keywords: protection; voltage; controlled rectifier; silicon controlled ... See more keywords

Low trigger voltage bulk FinFET silicon controlled rectifier in nanotechnology

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Published in 2018 at "Modern Physics Letters B"

DOI: 10.1142/s0217984918400729

Abstract: The bulk fin field-effect transistor (FinFET) has been the primary semiconductor technology in nanotechnology. To protect low supply voltage circuits based on FinFET, trigger voltage [Formula: see text] of the silicon controlled rectifier (SCR) which… read more here.

Keywords: voltage; trigger voltage; silicon controlled; controlled rectifier ... See more keywords

Gate-controlled silicon controlled rectifier with adjustable clamping voltage using a photoelectric mechanism.

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Published in 2022 at "Optics express"

DOI: 10.1364/oe.475142

Abstract: In order to flexibly control the voltage-clamping capability of silicon controlled rectifiers (SCRs), this paper proposes a photoelectric gate-controlled SCR (PGCSCR). Equivalent circuits and technology computer aided design (TCAD) simulations are used to analyze how… read more here.

Keywords: silicon controlled; voltage; clamping voltage; gate controlled ... See more keywords