Numerical modeling study on the epitaxial growth of silicon from dichlorosilane
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DOI: 10.1016/j.jcrysgro.2017.11.009
Abstract: Abstract Computer simulations play an important role in determining the optimal design parameters for chemical vapor deposition (CVD) reactors, such as flow rates, positions of the inlet and outlet orifices, and rotational rates, etc. Reliability… read more here.
Keywords: epitaxial growth; silicon dichlorosilane; growth silicon; silicon ... See more keywords