Spatial variation of lattice plane bending of 4H-SiC substrates
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DOI: 10.1039/c7ce00572e
Abstract: Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD). In order to evaluate basal plane bending properties in detail, line scans of 0004 reflection rocking curves were carried… read more here.
Keywords: sic substrates; basal plane; plane bending; silicon face ... See more keywords