Increase in silicon film deposition rate in a SiHCl 3 -SiH x -H 2 system
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DOI: 10.1016/j.jcrysgro.2016.10.035
Abstract: Abstract The silicon film deposition rate at 850 °C using trichlorosilane gas was increased by adding SiH x gas which was in situ produced by the thermal decomposition of monomethylsilane gas in ambient hydrogen. With the… read more here.
Keywords: deposition rate; gas; silicon film;