Hexagonal silicon grown from higher order silanes.
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DOI: 10.1088/1361-6528/ab0d46
Abstract: We demonstrate the merits of an unexplored precursor, tetrasilane (Si4H10), as compared to disilane (Si2H6) for the growth of defect-free, epitaxial hexagonal silicon (Si). We investigate the growth kinetics of hexagonal Si shells epitaxially around… read more here.
Keywords: growth; silicon grown; temperature; hexagonal silicon ... See more keywords