Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation
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DOI: 10.3390/photonics7030068
Abstract: In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of… read more here.
Keywords: planar; silicon ion; using silicon; ion implantation ... See more keywords