Design study of the gate-all-around silicon nanosheet MOSFETs
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DOI: 10.1088/1361-6641/ab6bab
Abstract: The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures provide… read more here.
Keywords: short channel; gate; silicon nanosheet; gaa sins ... See more keywords