Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00404-6
Abstract: This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate technology for its short channel effects (SCEs) immune properties. Here, its analog/RF device performance metrices… read more here.
Keywords: nothing electrostatically; electrostatically doped; silicon nothing; effect ... See more keywords
Extended Design Space of Silicon-on-Nothing MEMS
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Microelectromechanical Systems"
DOI: 10.1109/jmems.2019.2927466
Abstract: Complex monolithic Si MEMS can be created using a single mask by extending the empty-space-in-silicon (ESS) or silicon-on-nothing (SON) technology. The fabrication combines isotropic and anisotropic etching with selective removal of passivation layers followed by… read more here.
Keywords: silicon nothing; silicon; space silicon; space ... See more keywords
3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2643688
Abstract: A 3-D analytical model of a new structure, namely, dual-material triple-gate silicon-on-nothing MOSFET is proposed in this paper. 3-D Poisson’s equation with proper boundary conditions was solved to obtain the surface potential variation of the… read more here.
Keywords: gate silicon; silicon nothing; triple gate; material triple ... See more keywords