Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125522
Abstract: Abstract The integration of gallium nitride with low-cost, transparent substrates such as glass and crystallographically incompatible substrates such as Si(0 0 1) has been long desired for III-N electronics. Here the authors demonstrate how GaN growth on… read more here.
Keywords: seed; gan growth; oriented silicon; silicon seed ... See more keywords