Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
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DOI: 10.1088/1361-6641/ac0d9a
Abstract: Three different elements, silicon, selenium, and tellurium, are ion-implanted in gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy overgrown two-dimensional electron gas. While the heavy ion… read more here.
Keywords: silicon selenium; mbe grown; two dimensional; back gate ... See more keywords