Effective surface emissivity and heat dissipation among integrated bamboo-like super-black vertical carbon nanotube array electrodes in silicon via holes
Sign Up to like & getrecommendations! Published in 2020 at "Carbon"
DOI: 10.1016/j.carbon.2019.11.068
Abstract: Abstract Recently, carbon nanotube (CNT)-based micro-devices have attracted extensive attention at the frontiers of intelligent electronics, but the practical application of these devices are seriously limited by the low CNT package rates, poor heat dissipation,… read more here.
Keywords: array; silicon via; bamboo like; carbon nanotube ... See more keywords
Study on the relationship between Cu protrusion behavior and stresses evolution in the through-silicon via characterized by in-situ μ-Raman spectroscopy
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113949
Abstract: Abstract Thermal cycling during annealing step can induce stresses and consequently lead to the Cu protrusion in through-silicon via (TSV) structures. However, the relationship between the thermal stress in Si and the consequent Cu protrusion… read more here.
Keywords: protrusion; silicon via; spectroscopy; relationship ... See more keywords
Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2021.106153
Abstract: Abstract Thermomechanical reliability remains challenging in through-silicon via (TSV) manufacture, a key technology in three-dimensional packaging of integrated circuits. A primary issue in reliability is the residual stress created during manufacture and operation by mismatch… read more here.
Keywords: silicon via; stress amorphous; residual stress; via tsv ... See more keywords
Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2017.2678203
Abstract: In this paper, coaxial through-silicon via (C-TSV) is modeled and studied with the consideration of electrically floating inner silicon substrate. Nonlinear capacitances of the central via and the outer shielding shell are accurately captured by… read more here.
Keywords: inner silicon; silicon via; coaxial silicon; floating inner ... See more keywords
Heterogeneous Integrated Microsystems With Nontraditional Through-Silicon Via Technologies
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2017.2678461
Abstract: In this paper, the design, fabrication, and high-frequency characterization of three types of nontraditional through-silicon via (TSV) technologies are discussed. First, the integration of TSVs within a silicon microfluidic heat sink is presented; TSVs are… read more here.
Keywords: tsvs; silicon via; heterogeneous integrated; nontraditional silicon ... See more keywords
Strain Distribution Induced in SOI Photonic Substrate by Through Silicon via Using Advanced Scanning X-Ray Nano-Diffraction
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2018.2881418
Abstract: In 3-D integration, dice are vertically interconnected with through silicon via (TSV), which consist of holes etched in a thinned silicon substrate and filled with copper. This process induces thermal strain in surrounding silicon. New… read more here.
Keywords: silicon via; using advanced; advanced scanning; silicon ... See more keywords