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Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5885-y
Abstract: Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative…
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Keywords:
stress distribution;
behaviors stress;
silicon vias;
vias ... See more keywords
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Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113512
Abstract: Abstract Sidewall scallops of through-silicon-vias (TSVs) formed during the Bosch etching process will bring serious challenges to TSV reliability. In this paper, the impact of sidewall scallops on the electric-thermo-mechanical reliability of TSVs is investigated,…
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Keywords:
electric thermo;
silicon vias;
scallop induced;
thermo mechanical ... See more keywords
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Published in 2017 at "Journal of Microelectromechanical Systems"
DOI: 10.1109/jmems.2016.2624423
Abstract: Through silicon vias (TSVs) are key enablers of 3-D integration technologies which, by vertically stacking and interconnecting multiple chips, achieve higher performances, lower power, and a smaller footprint. Copper is the most commonly used conductor…
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Keywords:
invar metal;
silicon vias;
high temperature;
vias invar ... See more keywords
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Published in 2018 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2018.2854552
Abstract: This letter develops a simplified circuit model for the shielded differential through-silicon vias (SD-TSVs). The model is consisted of four frequency-independent elements and can accurately predict the insertion loss of the SD-TSVs up to 20…
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Keywords:
silicon vias;
equalizer;
passive equalizer;
differential silicon ... See more keywords
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Published in 2017 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2017.2741340
Abstract: A novel $\pi $ -type equivalent-circuit model of through-silicon vias (TSVs) for 3-D integrated circuits (3-D ICs) considering eddy current and proximity effects is proposed in this paper. The numerical models for the serial resistance…
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Keywords:
silicon vias;
frequency;
model;
tex math ... See more keywords
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Published in 2020 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/6.0000026
Abstract: Through-silicon vias (TSVs) are a critical technology for three-dimensional integrated circuit technology. These through-substrate interconnects allow electronic devices to be stacked vertically for a broad range of applications and performance improvements such as increased bandwidth,…
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Keywords:
seed;
silicon vias;
tutorial forming;
technology ... See more keywords
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Published in 2022 at "Journal of the Electrochemical Society"
DOI: 10.1149/1945-7111/ac5ad8
Abstract: The microstructure and crystallographic texture of copper electrodeposits in millimeter scale through silicon vias are characterized using electron backscatter diffraction. The deposits obtained from additive-containing CuSO4-H2SO4 electrolytes are characteristic of the superconformal deposition process, with…
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Keywords:
texture copper;
silicon vias;
growth;
millimeter scale ... See more keywords
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Published in 2023 at "Thermal Science"
DOI: 10.2298/tsci220805061r
Abstract: Considering the manufacturing and packaging process, three-dimensional integrated circuits design often requires irregular chip structures. Three-dimensional integrated circuits with irregular structures can facilitate differentiated chip design and reduce manufacturing costs. Highly complex through-silicon vias have…
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Keywords:
silicon vias;
dimensional integrated;
three dimensional;
model ... See more keywords