Microwave Resistivity of Thermally Oxidized High Resistivity Silicon Wafers
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5636-0
Abstract: We used a microwave dielectric resonator to study how the process of thermal oxidation of high resistivity silicon wafers reduces the wafer microwave resistivity. Measurements were performed before surface thermal oxidation, after the oxidation, and… read more here.
Keywords: resistivity; microwave resistivity; high resistivity; resistivity silicon ... See more keywords
Numerical study on thermal stress cutting of silicon wafers using two-line laser beams
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Mechanical Science and Technology"
DOI: 10.1007/s12206-019-0702-6
Abstract: We propose a method of cleaving silicon wafers using two-line laser beams. The base principle is separating the silicon wafer using crack propagation caused by laser-induced thermal stress. Specifically, this method uses two-line laser beams… read more here.
Keywords: silicon wafers; two line; silicon; line ... See more keywords
Application of temporary adherence to improve the manufacturing of 3D thin silicon wafers
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Adhesion and Adhesives"
DOI: 10.1016/j.ijadhadh.2019.03.009
Abstract: Abstract The presented work concerns the manufacturing of very thin silicon wafers for a 3D Integrated Circuit industrial purpose. One of the key parameters of the 3D integration is the adherence of the bonded structure… read more here.
Keywords: manufacturing thin; adherence; silicon wafers; thin silicon ... See more keywords
The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.049
Abstract: Abstract We have examined 200 mm GaN on silicon wafers, while varying the AlN nucleation temperature, and have found that higher temperatures result in a more convex bow on the wafers. In addition, by performing full… read more here.
Keywords: inverted pyramid; temperature; pyramid defects; silicon wafers ... See more keywords
Ultrasonication pretreatment of diamond wire sawn multi-crystalline silicon wafers for texturing
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.09.031
Abstract: Abstract Ultrasonication vibration as the pretreatment process, combined with wet acid etching, was utilized for the texture of diamond wire sawn (DWS) multi-crystalline silicon wafers. The SiC particles in the ultrasonic device were imposed for… read more here.
Keywords: wire sawn; silicon wafers; silicon; pretreatment ... See more keywords
Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer
Sign Up to like & getrecommendations! Published in 2021 at "Superconductor Science and Technology"
DOI: 10.1088/1361-6668/abe35e
Abstract: In this paper, we study the crystalline properties and superconducting critical temperature of ultra-thin (5–9 nm) NbN films deposited on 8-inch silicon wafers by reactive sputtering. We show that the deposition of NbN on a… read more here.
Keywords: silicon wafers; nbn aln; deposited inch; critical temperature ... See more keywords
Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2020.2968111
Abstract: This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity… read more here.
Keywords: multicrystalline silicon; temperature sensitivity; silicon wafers; temperature ... See more keywords
Visible-light silicon nitride waveguide devices and implantable neurophotonic probes on thinned 200 mm silicon wafers.
Sign Up to like & getrecommendations! Published in 2019 at "Optics express"
DOI: 10.1364/oe.27.037400
Abstract: We present passive, visible light silicon nitride waveguides fabricated on ≈ 100 µm thick 200 mm silicon wafers using deep ultraviolet lithography. The best-case propagation losses of single-mode waveguides were ≤ 2.8 dB/cm and ≤… read more here.
Keywords: silicon nitride; 200 silicon; visible light; silicon wafers ... See more keywords