Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives
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DOI: 10.3390/ma12101721
Abstract: Silsesquioxane (SQ) derivatives possessing intramolecular H2C = CH- groups and Si-H groups were designed as precursors for ternary silicon oxycarbide (SiOC). By using R-Si(OMe)3, H-Si(OEt)3 and (H-Si(Me)2)2O as starting compounds, SQ derivatives of VH-SQ (R… read more here.
Keywords: formation thermal; ternary silicon; behaviors ternary; thermal behaviors ... See more keywords