Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT
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DOI: 10.1017/s1431927618015301
Abstract: Abstract Application of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors,… read more here.
Keywords: characterization; sidewall doping; sims apt; quantitative aspects ... See more keywords