Design and simulation of 3C-SiC vertical power MOSFETs
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DOI: 10.1080/00207217.2020.1818843
Abstract: ABSTRACT This paper reports on the design and simulation of 3C-SiC low-doped drain power MOSFETs, including key parameters such as the avalanche impact ionisation model and its relation to the breakdown voltage, the doping dependence… read more here.
Keywords: layer; simulation sic; power mosfets; simulation ... See more keywords