Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures
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DOI: 10.1134/s1063782619030151
Abstract: The simulations of recently discovered effect of subnanosecond avalanche switching of Si n+−n−n+-structures have been performed. The electric field in n+−n−n+-structure is shown to remain quasi-uniform along the current flow direction during the voltage rise… read more here.
Keywords: avalanche switching; avalanche; silicon structures; simulations silicon ... See more keywords