Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer
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DOI: 10.1063/5.0237694
Abstract: The gate reliability of p-GaN gate high electron mobility transistors (HEMTs) was investigated in this Letter. Compared with conventional p-GaN gate HEMT, the in situ SiN cap-layer on the p-GaN layer can lift up the… read more here.
Keywords: sin cap; situ sin; cap layer; reliability ... See more keywords