Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure
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DOI: 10.1109/ted.2020.3037272
Abstract: The combination of ultrathin-barrier (UTB) AlGaN (< 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recess-free enhancement-mode… read more here.
Keywords: algan gan; ultrathin barrier; gan heterostructure; sup ... See more keywords