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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2988860
Abstract: An anomalous breakdown voltage (BV) walk-in phenomenon of the trench-gate p-type vertical double-diffused metal–oxide–semiconductor (VDMOS) after single avalanche stress has been experimentally investigated. It is found that the BV of the VDMOS is decreased after…
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Keywords:
trench gate;
gate type;
avalanche stress;
single avalanche ... See more keywords