The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors
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DOI: 10.1109/ted.2020.3022004
Abstract: The impact of a single displacement defect on the performance of tunneling field-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point… read more here.
Keywords: effect transistors; single displacement; impact single; field effect ... See more keywords