Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts.
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DOI: 10.1002/smll.202204178
Abstract: Si1-x Gex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si1-x Gex… read more here.
Keywords: si1; single elementary; gex nanosheets; composition dependent ... See more keywords