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Published in 2017 at "Analog Integrated Circuits and Signal Processing"
DOI: 10.1007/s10470-017-0992-5
Abstract: With advances in technology scaling, circuits become increasingly more sensitive to transient pulses caused by single event (SE) particles. With scaling, interconnects are also being laid closer to each other causing increased cross-coupling noise effects.…
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Keywords:
noise effects;
thermally induced;
crosstalk noise;
crosstalk ... See more keywords
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Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1224-7
Abstract: The gate oxide layer and parasitic bipolar junction transistor are inherent elements of vertical double-diffused power metal–oxide–semiconductor field-effect transistors (MOSFETs). Single-event gate rupture (SEGR) and single-event burnout (SEB) may be triggered by penetration of energetic…
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Keywords:
layer;
power;
single event;
vertical double ... See more keywords
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Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9549-8
Abstract: Dear editor, In custom static random access memory (SRAM) cell, radiation-induced single bit upsets (SBUs) are considered as the main cause of soft error [1]. Advanced technologies and scaling down of feature sizes have made…
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Keywords:
mcu;
well contact;
density;
sram ... See more keywords
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Published in 2021 at "Advances in Space Research"
DOI: 10.1016/j.asr.2021.02.007
Abstract: Abstract Space weather is driven and modulated by the activity in the Sun. Space weather events have the potential to inflict critical damage to space systems. Nowadays, space assets are essential in our basic needs,…
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Keywords:
space weather;
single event;
space;
event upsets ... See more keywords
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Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113443
Abstract: Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R)…
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Keywords:
total ionization;
ionization dose;
reram;
event effects ... See more keywords
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Published in 2021 at "Radiation Physics and Chemistry"
DOI: 10.1016/j.radphyschem.2021.109526
Abstract: Abstract The existence of buried oxide aggravates the self-heating effect (SHE) in fully depleted silicon-on-insulator (FDSOI) device. To reduce SHE, a new structure named selected BOX-based (SELBOX) FDSOI transistor is introduced in this work, and…
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Keywords:
single event;
selected box;
fdsoi transistor;
transistor ... See more keywords
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Published in 2017 at "Industrial & Engineering Chemistry Research"
DOI: 10.1021/acs.iecr.7b01344
Abstract: One of the crucial advantages of single-event kinetic models is the possibility of extrapolating them to other reaction conditions, which is highly interesting for catalyst design. However, no publication exists that proves the theoretically derived…
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Keywords:
olefin;
cracking zsm;
single event;
event kinetic ... See more keywords
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Published in 2020 at "Journal of Analytical Atomic Spectrometry"
DOI: 10.1039/c9ja00379g
Abstract: The occurrence of microplastics in many, if not all environmental compartments is a matter of increasing concern and deserves proper attention. However, there is still a lack of analytical tools for straightforward monitoring of these…
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Keywords:
icp;
event mode;
mass;
single event ... See more keywords
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Published in 2020 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2020.1806838
Abstract: Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distributions of protons calculated by GEANT4 are…
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Keywords:
sensitive volume;
critical charge;
energy;
volume depth ... See more keywords
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Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac9287
Abstract: Single event effect (SEE) is an important problem in the reliability research of integrated circuits. The study of SEE of traditional MOSFET devices is mainly based on simulation software, which is characterized by slow simulation…
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Keywords:
transient current;
single event;
mosfet;
deep learning ... See more keywords
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Published in 2017 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/38/12/124006
Abstract: Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability…
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Keywords:
power;
single event;
structure;
power mosfets ... See more keywords