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Published in 2017 at "Analog Integrated Circuits and Signal Processing"
DOI: 10.1007/s10470-017-0992-5
Abstract: With advances in technology scaling, circuits become increasingly more sensitive to transient pulses caused by single event (SE) particles. With scaling, interconnects are also being laid closer to each other causing increased cross-coupling noise effects.…
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Keywords:
noise effects;
thermally induced;
crosstalk noise;
crosstalk ... See more keywords
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Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1224-7
Abstract: The gate oxide layer and parasitic bipolar junction transistor are inherent elements of vertical double-diffused power metal–oxide–semiconductor field-effect transistors (MOSFETs). Single-event gate rupture (SEGR) and single-event burnout (SEB) may be triggered by penetration of energetic…
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Keywords:
layer;
power;
single event;
vertical double ... See more keywords
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Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9549-8
Abstract: Dear editor, In custom static random access memory (SRAM) cell, radiation-induced single bit upsets (SBUs) are considered as the main cause of soft error [1]. Advanced technologies and scaling down of feature sizes have made…
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Keywords:
mcu;
well contact;
density;
sram ... See more keywords
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Published in 2021 at "Advances in Space Research"
DOI: 10.1016/j.asr.2021.02.007
Abstract: Abstract Space weather is driven and modulated by the activity in the Sun. Space weather events have the potential to inflict critical damage to space systems. Nowadays, space assets are essential in our basic needs,…
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Keywords:
space weather;
single event;
space;
event upsets ... See more keywords
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Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113443
Abstract: Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R)…
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Keywords:
total ionization;
ionization dose;
reram;
event effects ... See more keywords
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Published in 2021 at "Radiation Physics and Chemistry"
DOI: 10.1016/j.radphyschem.2021.109526
Abstract: Abstract The existence of buried oxide aggravates the self-heating effect (SHE) in fully depleted silicon-on-insulator (FDSOI) device. To reduce SHE, a new structure named selected BOX-based (SELBOX) FDSOI transistor is introduced in this work, and…
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Keywords:
single event;
selected box;
fdsoi transistor;
transistor ... See more keywords
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Published in 2017 at "Industrial & Engineering Chemistry Research"
DOI: 10.1021/acs.iecr.7b01344
Abstract: One of the crucial advantages of single-event kinetic models is the possibility of extrapolating them to other reaction conditions, which is highly interesting for catalyst design. However, no publication exists that proves the theoretically derived…
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Keywords:
olefin;
cracking zsm;
single event;
event kinetic ... See more keywords
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Published in 2020 at "Journal of Analytical Atomic Spectrometry"
DOI: 10.1039/c9ja00379g
Abstract: The occurrence of microplastics in many, if not all environmental compartments is a matter of increasing concern and deserves proper attention. However, there is still a lack of analytical tools for straightforward monitoring of these…
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Keywords:
icp;
event mode;
mass;
single event ... See more keywords
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Published in 2024 at "AIP Advances"
DOI: 10.1063/5.0184659
Abstract: With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention. This paper investigates single-event transient (SET) caused by the proton direct ionization on…
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Keywords:
cmos image;
single event;
proton;
event transient ... See more keywords
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Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0283627
Abstract: This work presents the investigation of the single-event effects in β-Ga2O3 Schottky barrier diodes (SBDs) under heavy-ion irradiation with a reverse bias voltage of 100 V. The research focuses on the performance degradation and underlying mechanisms…
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Keywords:
single event;
schottky barrier;
ga2o3 schottky;
irradiation ... See more keywords
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Published in 2020 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2020.1806838
Abstract: Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distributions of protons calculated by GEANT4 are…
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Keywords:
sensitive volume;
critical charge;
energy;
volume depth ... See more keywords