Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
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DOI: 10.3952/physics.v59i4.4134
Abstract: In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation… read more here.
Keywords: sinx interlayer; dislocation; dislocation density; sinx ... See more keywords