H-terminated diamond RF MOSFETs with AlOx/SiNx bi-layer passivation and selectively etched T-shaped gates
Sign Up to like & getrecommendations! Published in 2020 at "Diamond and Related Materials"
DOI: 10.1016/j.diamond.2020.108160
Abstract: Abstract This paper reports a novel ALD-AlOx/PECVD-SiNx bi-layer structure to passivate the surface channels of the hydrogen terminated diamond transistors. The upper SiNx was selectively etched to fabricate the robust T-shaped gates, while the lower… read more here.
Keywords: sinx layer; alox sinx; terminated diamond; shaped gates ... See more keywords
Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer
Sign Up to like & getrecommendations! Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.04.089
Abstract: Abstract Self-assembled GaN pyramids were successfully fabricated on a SiNx layer that was grown in situ by metal-organic chemical vapor deposition. The diameter and height of a single pyramid was approximately 6–10 μm, and the structure… read more here.
Keywords: gan pyramids; sinx layer; properties gan; optical properties ... See more keywords