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Published in 2017 at "Materials Letters"
DOI: 10.1016/j.matlet.2017.05.121
Abstract: Abstract In this work, we propose a double stack layer design of SiNx/pm-Si thin films by using dichlorosilane in plasma enhanced chemical vapor deposition (PECVD). Adequate deposition condition has been found to attain the average…
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Keywords:
layer;
double stack;
stack layer;
sinx thin ... See more keywords
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Published in 2019 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2019.02.016
Abstract: Abstract Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion…
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Keywords:
passivation;
film;
solar cells;
silicon ... See more keywords
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Published in 2019 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2019.05.066
Abstract: Abstract In this study, we investigated the etching characteristics of non-stoichiometric SiNx thin films in C4F8 + Ar inductively coupled rf (13.56 MHz) plasma. The SiNx etching rates together with SiNx/Si and SiNx/SiO2 etching selectivities were measured as…
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Keywords:
thin films;
films c4f8;
chemistry;
sinx thin ... See more keywords
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Published in 2019 at "Materials Technology"
DOI: 10.1080/10667857.2019.1603185
Abstract: ABSTRACT In the present work SiNx thin films, grown by PECVD technique using dichlorosilane, were used in electroluminescent device (EL) structure. Series of experiments were carried out by varying the flow of H2 and SiH2Cl2,…
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Keywords:
using dichlorosilane;
thin films;
sinx thin;
emission ... See more keywords