Angular dependences of SiO 2 etch rates at different bias voltages in CF 4 , C 2 F 6 , and C 4 F 8 plasmas
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DOI: 10.1016/j.tsf.2017.03.047
Abstract: Abstract The angular dependences of SiO 2 etch rates at different bias voltages for in CF 4 , C 2 F 6 , and C 4 F 8 plasmas were investigated using a Faraday cage… read more here.
Keywords: dependences sio; etch rates; rates different; sio etch ... See more keywords