Effect of SiO2 capping layer on the ferroelectricity of Hf0.5Zr0.5O2 films
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DOI: 10.1063/5.0027476
Abstract: In this paper, SiO2 capping layers were introduced to improve the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films. HZO thin films with the SiO2 capping layers exhibit excellent ferroelectric characteristics. The largest remnant polarization (2Pr)… read more here.
Keywords: sio2 capping; hf0 5zr0; capping layer; 5zr0 5o2 ... See more keywords